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| SMD Type MOS Field Effect Transistor KPA1790 Features Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 RDS(on)2 = 0.74 Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and surface mount package TYP. (VGS = 10 V, ID = 0.5 A) TYP. (VGS = 4 V, ID = 0.5 A) TYP. (VGS = -10 V, ID = -0.35 A) TYP. (VGS = -4 V, ID = -0.35 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 units) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 *1. PW 10 s, Duty Cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS 0.5 0.02 N-Channel 60 20 1.0 4.0 1.7 2 150 -55 to +150 -0.35 0.01 A mJ P- Channel -60 20 0.7 2.8 Unit V V A A W W *2. Mounted on ceramic substrate of 2000 mm2 X 2.25 mm *3. Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0V www.kexin.com.cn 1 SMD Type KPA1790 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance RDS(on)2 RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Testconditons VDS = 60 V, VGS = 0 V VDS = -60V, VGS = 0 V VGS = VGS = 16 V, VDS = 0 V 16 V, VDS = 0 V N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Channel VDS = -10 V,VGS = 0 V,f = 1 MHz N-Channel VDD = 30 V, ID =0.5 A,VGS = 10 V RG = 10 P- Channel VDD = -30 V, ID = -0.35 A,VGS = -10 V RG = 10 N-Channel ID = 1.0 A,VDD = 48 V,VGS = 10 V P- Channel ID = -0.7 A,VDD = -48 V,VGS = -10 V IF = 1.0 A, VGS = 0 V IF = 0.7 A, VGS = 0 V N-Channel IF = 1.0A, VGS = 0 V,di/dt = 100 A/ P-Channel IF = 0.7A, VGS = 0 V,di/dt = 100 A/ s s P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch 1.0 -1.0 1.0 5.0 0.12 0.19 0.45 0.74 180 230 100 100 35 25 1 1.9 1.4 1.7 23 30 17 15 8 7.6 1 1 3.5 2 0.75 0.85 30 58 33 130 0.26 0.34 0.6 1.1 1.7 -1.7 1.7 Min Typ Max 10 -10 10 10 2.5 -2.5 IC IC Unit A A V S VDS = 10 V, ID = 1 mA VDS = -10 V, ID = -1 mA VDS = 10 V, ID = 0.5 A VDS = -10 V, ID = -0.35A VGS = 10 V, ID = 0.5 A VGS = 4 V, ID = 0.5 A VGS = -10 V, ID = -0.35 A VGS = -4 V, ID = -0.35 A N-Channel VDS = 10 V,VGS = 0 V,f = 1 MHz pF pF pF ns ns ns ns nC nC nC V ns nC 2 www.kexin.com.cn |
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